Micron Technology, Inc.
Reference-voltage-generators within integrated assemblies

Abstract:

Some embodiments include an integrated assembly having a memory region with memory cells and sense/access lines configured for addressing the memory cells, and having a reference-voltage-generator proximate to the memory region. The reference-voltage-generator includes resistive units configured substantially identically to the sense/access lines. Some embodiments include an integrated assembly having a memory region with memory cells, digit lines and wordlines. Each of the memory cells is uniquely addressed with one of the wordlines in combination with one of the digit lines. The wordlines are coupled with driver circuitry and the digit lines are coupled with sensing circuitry. A reference-voltage-generator is proximate to the memory region. The reference-voltage-generator includes resistive units configured substantially identically to the wordlines and/or includes resistive units configured substantially identically to the digit lines.