Micron Technology, Inc.
Vertical access line multiplexor

Last updated:

Abstract:

An access line multiplexor can be formed under vertically stacked tiers of memory cells. The multiplexor can include a first transistor coupled to a vertical access line, to a horizontal access line, and to a second transistor. The second transistor can be coupled to a power supply. The transistors can be n-type metal oxide semiconductor transistors.

Status:
Grant
Type:

Utility

Filling date:

10 Feb 2021

Issue date:

13 Sep 2022