Micron Technology, Inc.
Apparatuses and methods for accessing hybrid memory system

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Abstract:

Apparatuses and methods for controlling word lines and sense amplifiers in a semiconductor device are described. An example apparatus includes: a memory array including a plurality of memory cells; a memory controller that transmits a command signal, address signals and further provides and receives data signals; a first port including: a first command terminal that receives the first command signal from the memory controller, first address terminals that receive first address signals from the memory controller, and first data terminals that receive first data signals from the memory controller and further transmit first data signals to the memory controller; and a second port including: a second command terminal that receives a second command signal from the memory controller; second address terminals that receive second address signals from the memory controller and second data terminals that receive second data signals from an external apparatus other than the memory controller and further transmit second data signals to the external apparatus.

Status:
Grant
Type:

Utility

Filling date:

6 Aug 2020

Issue date:

20 Sep 2022