Micron Technology, Inc.
Suspicious activity monitoring memory system

Abstract:

The present disclosure relates generally to semiconductor devices, and, in particular, to monitoring circuitry configured to monitor a signal for an overcurrent, undercurrent, overvoltage, and/or undervoltage condition. The monitor circuit may utilize pull down transistors to generate a local voltage level. The local voltage level is then used to generate an indication of whether the monitored value has diverged from an operating region and/or has crossed a threshold of operation.