Micron Technology, Inc.
Conductive line construction, memory circuitry, and method of forming a conductive line construction

Abstract:

A method of forming a conductive line construction comprises forming a structure comprising polysilicon-comprising material. Elemental titanium is directly against the polysilicon of the polysilicon-comprising material. Silicon nitride is directly against the elemental titanium. Elemental tungsten is directly against the silicon nitride. The structure is annealed to form a conductive line construction comprising the polysilicon-comprising material, titanium silicide directly against the polysilicon-comprising material, elemental tungsten, TiSi.sub.xN.sub.y between the elemental tungsten and the titanium silicide, and one of (a) or (b), with (a) being the TiSi.sub.xN.sub.y is directly against the titanium silicide, and (b) being titanium nitride is between the TiSi.sub.xN.sub.y and the titanium silicide, with the TiSi.sub.xN.sub.y being directly against the titanium nitride and the titanium nitride being directly against the titanium silicide. Structure independent of method is disclosed.