Micron Technology, Inc.
Resistance variable memory sensing using programming signals

Abstract:

Apparatuses and methods for sensing a resistance variable memory cell include circuitry to apply a programming signal to a memory cell in the array, the programming signal associated with programming resistance variable memory cells to a particular data state, and detect a change in resistance of the memory cell to determine if a data state of the memory cell changes from an initial data state to a different data state during application of the programming signal.