Micron Technology, Inc.
Methods of forming microelectronic devices, and related microelectronic devices, and electronic systems

Abstract:

A method of forming a microelectronic device comprises forming a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures. Apertures are formed to extend to surfaces of the insulative structures at different depths than one another within the stack structure. Dielectric liner structures are formed within the apertures. Sacrificial structures are formed within portions of the apertures remaining unoccupied by the dielectric liner structures. Upper portions of the sacrificial structures are replaced with capping structures. Portions of the insulative structures and remaining portions of the sacrificial structures are replaced with electrically conductive material. Microelectronic devices and electronic systems are also described.