Micron Technology, Inc.
Apparatuses including capacitor structures, and related memory devices, electronic systems, and methods

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Abstract:

An apparatus comprises first electrodes vertically extending through an isolation material, a second electrode horizontally intervening between two or more of the first electrodes laterally neighboring one another, and a dielectric structure horizontally and vertically intervening between the second electrode and the two or more of the first electrodes. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.

Status:
Grant
Type:

Utility

Filling date:

17 May 2019

Issue date:

29 Jun 2021