Micron Technology, Inc.
Apparatuses including capacitor structures, and related memory devices, electronic systems, and methods
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Abstract:
An apparatus comprises first electrodes vertically extending through an isolation material, a second electrode horizontally intervening between two or more of the first electrodes laterally neighboring one another, and a dielectric structure horizontally and vertically intervening between the second electrode and the two or more of the first electrodes. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.
Status:
Grant
Type:
Utility
Filling date:
17 May 2019
Issue date:
29 Jun 2021