Micron Technology, Inc.
Methods for adjusting row hammer refresh rates and related memory devices and systems

Abstract:

Methods of operating a memory device are disclosed. A method may include determining a number of active commands associated with at least one memory bank of a memory device during a first time interval. The method may further include adjusting a row hammer refresh rate for the at least one memory bank for a second time interval based on the number of active commands associated with the at least one memory bank during the first time interval. A memory device and an electronic system are also described.