Micron Technology, Inc.
Erase cycle healing using a high voltage pulse

Abstract:

A request to perform a write operation at a memory component can be received. A destination block of the memory component to store data of the write operation can be determined. A voltage pulse can be applied to the destination block that places a memory cell of the destination block at a voltage level associated with a high voltage state. Responsive to applying the voltage pulse to the destination block, an erase operation for the destination block can be performed to change the voltage level of the memory cell from the high voltage state to a low voltage state. A write operation can be performed to write the data to the destination block that is at the low voltage state.