Micron Technology, Inc.
Two multi-level memory cells sensed to determine multiple data values

Abstract:

The present disclosure includes apparatuses, methods, and systems for sensing two memory cells to determine multiple data values. An embodiment includes a memory having a plurality of memory cells and circuitry configured to sense memory states of each of two self-selecting multi-level memory cells (MLC) of the plurality of memory cells to determine multiple data values. The data values are determined by sensing a memory state of a first MLC using a first sensing voltage in a sense window between a first threshold voltage distribution corresponding to a first memory state and a second threshold voltage distribution corresponding to a second memory state and sensing a memory state of a second MLC using a second sensing voltage in a sense window between the first threshold voltage distribution corresponding to a first memory state and a second threshold voltage distribution corresponding to the second memory state. The sequence of determining data values includes sensing the memory state of the first and the second MLCs using higher sensing voltages than the first and the second sensing voltages in subsequent sensing windows, in repeated iterations, until the state of the first and the second MLCs are determined. The first and second sensing voltages are selectably closer in the sense window to the first threshold voltage distribution or the second threshold voltage distribution.