Micron Technology, Inc.
Memory device with improved writing features

Abstract:

The present invention relates to a method of performing a write access phase for a memory device and comprising: transferring a write data from a local input and output line to a bit line to write the data into a memory cell via the bit line by activating a column switch provided between the bit line and the local input and output line during a first period; and transferring a read data read out from the memory cell to the local input and output line via the bit line by activating the column switch during asecond period; wherein the first period is longer than the second period.