Micron Technology, Inc.
Segregation-based memory

Abstract:

Methods, systems, and devices for operating memory cell(s) are described. A resistance of a storage element included in a memory cell may be programmed by applying a voltage to the memory cell that causes ion movement within the storage element, where the storage element remains in a single phase and has different resistivity based on a location of the ions within the storage element. In some cases, multiple of such storage elements may be included in a memory cell, where ions within the storage elements respond differently to electric pulses, and a non-binary logic value may be stored in the memory cell by applying a series of voltages or currents to the memory cell.