Micron Technology, Inc.
Integrated transistors and methods of forming integrated transistors

Abstract:

Some embodiments include an integrated device having a first transistor gate over a first region of a semiconductor base, and having a second transistor gate over a second region of the semiconductor base. First sidewall spacers are along sidewalls of the first transistor gate. The first sidewall spacers include SiBNO, where the chemical formula lists primary constituents rather than a specific stoichiometry. The first sidewall spacers have a first thickness. Second sidewall spacers are along sidewalls of the second transistor gate. The second sidewall spacers have a second thickness which is less than the first thickness. First source/drain regions are within the semiconductor base and are operatively proximate the first transistor gate. Second source/drain regions are within the semiconductor base and are operatively proximate the second transistor gate. Some embodiments include methods of forming integrated devices.