Micron Technology, Inc.
Column formation using sacrificial material

Abstract:

Methods, apparatuses, and systems related to forming a capacitor column using a sacrificial material are described. An example method includes patterning a surface of a semiconductor substrate having: a first silicate material over the substrate, a first nitride material over the first silicate material, a sacrificial material over the first nitride material, a second silicate material over the sacrificial material, and a second nitride material over the second silicate material. The method further includes forming a column of capacitor material in an opening through the first silicate material, the first nitride material, the sacrificial material, the second silicate material, and the second nitride material. The method further includes removing the sacrificial material.