Micron Technology, Inc.
Bank and channel structure of stacked semiconductor device
Last updated:
Abstract:
Apparatuses for supplying power to a plurality of memory core chips are described. An example apparatus includes: a substrate, an interface chip on the substrate, and a plurality of memory core chips on the interface chip coupled to the interface chip via a plurality of electrodes. The plurality of memory core chips includes a first memory core chip, a second memory core chip, and a third memory core chip disposed between the second memory core chip and the interface chip. The first memory core chip and the third memory core chip are activated for data access while the second memory core chip disposed between the first memory core chip and the third memory core chip is deactivated for data access.
Status:
Grant
Type:
Utility
Filling date:
31 Jul 2018
Issue date:
11 May 2021