Micron Technology, Inc.
Ohmic contacts for semiconductor structures

Abstract:

A composition and method for formation of ohmic contacts on a semiconductor structure are provided. The composition includes a TiAl.sub.xN.sub.y material at least partially contiguous with the semiconductor structure. The TiAl.sub.xN.sub.y material can be TiAl.sub.3. The composition can include an aluminum material, the aluminum material being contiguous to at least part of the TiAl.sub.xN.sub.y material, such that the TiAl.sub.xN.sub.y material is between the aluminum material and the semiconductor structure. The method includes annealing the composition to form an ohmic contact on the semiconductor structure.