Micron Technology, Inc.
Semiconductor devices comprising conductive patterns of varying dimensions and related systems

Abstract:

A metal pattern comprising interconnected small metal segments, medium metal segments, and large metal segments. At least one of the small metal segments comprises a pitch of less than about 45 nm and the small metal segments, medium metal segments, and large metal segments are separated from one another by variable spacing. Semiconductor devices comprising initial metallizations, systems comprising the metal pattern, and methods of forming a pattern are also disclosed.