Micron Technology, Inc.
Method and apparatuses for performing a voltage adjustment operation on a section of memory cells based on a quantity of access operations

Abstract:

Methods, systems, and devices for activity-based data protection in a memory device are described. In one example, a memory device may include a set memory sections each having memory cells configured to be selectively coupled with access lines of the respective memory section. A method of operating the memory device may include determining a quantity of access operations performed on a set of sections of a memory device, selecting at least one of the sections for a voltage adjustment operation, such as an equalization operation or a dissipation operation, based on the determined quantity of access operations, and performing the voltage adjustment operation on the selected section. Selecting one of the memory sections for a voltage adjustment operation may also be based on a timer. Equalizing a bias may include biasing a plate line, which may be coupled to a ferroelectric capacitor of a memory cell, to a ground voltage or some non-zero voltage. The voltage adjustment operation may include applying an equal voltage to opposite terminals of the memory cells, which may allow built-up charge, such as leakage charge accumulating from access operations of the selected memory section, to dissipate from the memory cells of the selected section.