Micron Technology, Inc.
Memory sub-system with dynamic calibration using component-based function(s)

Abstract:

A system includes a memory circuitry configured to receive a command, and in response to the command: generate a first read result based on reading a set of memory cells using a first read voltage; and generate a second read result based on reading the set of memory cells using a second read voltage, wherein: the first read voltage and the second read voltage are separately associated with a read level voltage initially assigned to read the set of memory cells, and the first read result and the second read result are for calibrating the read level voltage.