Micron Technology, Inc.
High-speed level shifter

Abstract:

Embodiments disclosed herein relate to level shifters of a memory device. Specifically, the level shifters include a first series arrangement of transistors to offset a first transistor. The level shifters also include a second series arrangement of transistors to offset a second transistor. The first series arrangement of transistors is opposite the second series arrangement of transistors. The output of the first series arrangement of transistors is coupled to a first node and selectively couples the first node to a first voltage based on an input signal. The output of the second series arrangement of transistors is coupled to a second node and couples the second node to the first voltage based on an input signal. The first node and the second node are coupled to the first voltage at different times. The series arrangements of transistors enables faster level shifting over conventional level shifters.