Micron Technology, Inc.
Semiconductor recess formation
Last updated:
Abstract:
Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.
Status:
Grant
Type:
Utility
Filling date:
29 Mar 2019
Issue date:
13 Apr 2021