Micron Technology, Inc.
Semiconductor recess formation

Last updated:

Abstract:

Methods, apparatuses, and systems related to forming a recess in a semiconductor structure are described. An example method includes etching the semiconductor structure using an elevated temperature dilution of acid and water. The method further includes etching the semiconductor structure using a room temperature wet etch of acid and water and a surface modification chemistry.

Status:
Grant
Type:

Utility

Filling date:

29 Mar 2019

Issue date:

13 Apr 2021