Micron Technology, Inc.
Epitaxial growth on semiconductor structures

Last updated:

Abstract:

Systems, apparatuses, and methods related to epitaxial growth on semiconductor structures are described. An apparatus may include a working surface of a substrate material and a storage node connected to an active area of an access device on the working surface. The apparatus may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines.

Status:
Grant
Type:

Utility

Filling date:

19 Jun 2019

Issue date:

13 Apr 2021