Micron Technology, Inc.
Epitaxial growth on semiconductor structures
Last updated:
Abstract:
Systems, apparatuses, and methods related to epitaxial growth on semiconductor structures are described. An apparatus may include a working surface of a substrate material and a storage node connected to an active area of an access device on the working surface. The apparatus may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines.
Status:
Grant
Type:
Utility
Filling date:
19 Jun 2019
Issue date:
13 Apr 2021