Micron Technology, Inc.
VERTICAL 3D MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract:

A vertical 3D memory device may comprise: a substrate including a plurality of conductive contacts each coupled with a respective one of a plurality of digit lines; a plurality of word line plates separated from one another with respective dielectric layers on the substrate, the plurality of word line plates including at least a first set of word lines separated from at least a second set of word lines with a dielectric material extending in a serpentine shape and at least a third set of word lines separated from at least a fourth set of word lines with a dielectric material extending in a serpentine shape; at least one separation layer separating the first set of word lines and the second set of word lines from the third set of word lines and the fourth set of word lines, wherein the at least one separation layer is parallel to both a digit line and a word line; and a plurality of storage elements each formed in a respective one of a plurality of recesses such that a respective storage element is surrounded by a respective word line, a respective digit line, respective dielectric layers, and a conformal material formed on a sidewall of a word line facing a digit line.