Micron Technology, Inc.
MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL
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Abstract:
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
Status:
Application
Type:
Utility
Filling date:
15 Dec 2020
Issue date:
8 Jul 2021