Micron Technology, Inc.
MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL

Last updated:

Abstract:

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

Status:
Application
Type:

Utility

Filling date:

15 Dec 2020

Issue date:

8 Jul 2021