Micron Technology, Inc.
METHODS OF FORMING SEMICONDUCTOR DIES WITH PERIMETER PROFILES FOR STACKED DIE PACKAGES

Abstract:

The present technology is directed to methods of forming semiconductor dies with rabbeted regions. For example, the method can comprise forming a first channel along a street from a backside of the wafer to an intermediate depth between the backside of the wafer and a front side of the wafer. The first channel has a first sloped sidewall and a second sloped sidewall. A second channel is then formed by laser cutting from the intermediate depth in the wafer toward the front side of the wafer along a region between the first and second sidewalls of the first channel. The first sloped sidewall defines a rabbeted region at a side of the first semiconductor dies and the second sloped sidewall defines a rabbeted region at a side of the second semiconductor dies.