Micron Technology, Inc.
Transistors and Methods of Forming Transistors

Abstract:

A transistor comprises a pair of source/drain regions having a channel there-between. A transistor gate construction is operatively proximate the channel. The channel comprises Si.sub.1-yGe.sub.y, where "y" is from 0 to 0.6. At least a portion of each of the source/drain regions comprises Si.sub.1-xGe.sub.x, where "x" is from 0.5 to 1. Other embodiments, including methods, are disclosed.