Micron Technology, Inc.
REDUNDANT ARRAY OF INDEPENDENT NAND FOR A THREE-DIMENSIONAL MEMORY ARRAY
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Abstract:
The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.
Status:
Application
Type:
Utility
Filling date:
4 Feb 2021
Issue date:
27 May 2021