Micron Technology, Inc.
REDUNDANT ARRAY OF INDEPENDENT NAND FOR A THREE-DIMENSIONAL MEMORY ARRAY

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Abstract:

The present disclosure includes a redundant array of independent NAND for a three dimensional memory array. A number of embodiments include a three-dimensional array of memory cells, wherein the array includes a plurality of pages of memory cells, a number of the plurality of pages include a parity portion of a redundant array of independent NAND (RAIN) stripe, and the parity portion of the RAIN stripe in each respective page comprises only a portion of that respective page.

Status:
Application
Type:

Utility

Filling date:

4 Feb 2021

Issue date:

27 May 2021