Micron Technology, Inc.
Voltage Profile for Reduction of Read Disturb in Memory Cells

Abstract:

An integrated circuit memory device having: a memory cell; a current sensor connected to the memory cell; a voltage driver connected to the memory cell; and a bleed circuit connected to the voltage driver. During an operation to read the memory cell, the voltage driver drives a voltage applied on the memory cell. The bleed circuit is activated to reduce the voltage during a time period in which the current sensor operates to determine whether or not at least a predetermined level of current is presented in the memory cell.