QUALCOMM Incorporated
BACKSIDE CONTACT OF A SEMICONDUCTOR DEVICE

Abstract:

Certain aspects of the present disclosure generally relate to a semiconductor device having a backside gate contact. An example semiconductor device generally includes a transistor disposed above a substrate, wherein the transistor comprises a gate region, a channel region, a source region, and a drain region and wherein the gate region is disposed adjacent to the channel region. The semiconductor device further includes a backside gate contact that is electrically coupled to a bottom surface of the gate region and that extends below a bottom surface of the substrate.