QUALCOMM Incorporated
CREATING AN IMPLANTED LAYER IN A SILICON-ON-INSULATOR (SOI) WAFER THROUGH CRYSTAL ORIENTATION CHANNELING

Abstract:

Utilizing crystal orientation channeling through the semiconductor lattice structure of a silicon-on-insulator (SOI) wafer to create a thermally stable implanted amorphous layer beneath a buried oxide (BOX) layer in the SOI wafer is described. Utilizing channeling in this manner may involve tilting and/or twisting the SOI wafer to align axes of the crystal orientation channels with projections vectors from an implanter. One example method of fabricating a semiconductor device generally includes orienting an SOI substrate, the SOI substrate having a BOX layer and a device layer disposed above the BOX layer, such that directions of projection vectors from an implanter are substantially aligned with longitudinal axes of crystal orientation channels in a lattice structure of a semiconductor material of the device layer; and projecting, with the implanter, ions or particles into the crystal orientation channels of the oriented SOI substrate to create an implanted layer below the BOX layer.