QUALCOMM Incorporated
Die-to-wafer hybrid bonding with forming glass

Last updated:

Abstract:

Certain aspects provide a three-dimensional integrated circuit (3DIC) and techniques for fabricating a 3DIC. For example, certain aspects provide a semiconductor device that generally includes one or more first integrated circuits (ICs), a first plurality of pads coupled to components of the one or more first ICs, one or more second ICs, forming glass (FG) material disposed adjacent to the one or more second ICs, and a second plurality of pads, wherein at least one of the second plurality of pads is coupled to components of the one or more second ICs, and wherein at least a portion of the first plurality of pads is bonded to at least a portion of the second plurality of pads.

Status:
Grant
Type:

Utility

Filling date:

13 Nov 2019

Issue date:

19 Oct 2021