QUALCOMM Incorporated
DOUBLE DIFFUSION BREAK GATES FULLY OVERLAPPING FIN EDGES WITH INSULATOR REGIONS

Abstract:

Certain aspects of the present disclosure generally relate to a semiconductor device having an insulator region disposed on at least one edge of a semiconductor fin structure. An example semiconductor device generally includes a first semiconductor region, an insulator region, a double diffusion break, and a first gate region. The first semiconductor region comprises a first fin structure and a second fin structure separated by a cavity. The insulator region is disposed along an edge of the first fin structure. The double diffusion break is disposed adjacent to the insulator region in the cavity. The first gate region is disposed around a portion of the first fin structure.