QUALCOMM Incorporated
METAL-OXIDE-METAL CAPACITOR FROM SUBTRACTIVE BACK-END-OF-LINE SCHEME

Abstract:

Certain aspects of the present disclosure generally relate to a metal-oxide-metal (MOM) capacitor formed from a subtractive back-end-of-line (BEOL) scheme. One example method of fabricating a semiconductor device generally includes forming an active layer and forming a capacitive element above the active layer with a back-end-of-line subtractive process for conductive materials.