QUALCOMM Incorporated
METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR-HETEROJUNCTION BIPOLAR TRANSISTOR INTEGRATION

Abstract:

A semiconductor device having metamorphic high electron mobility transistor (HEMT)-heterojunction bipolar transistor (HBT) integration on a semiconductor substrate. An example semiconductor device generally includes a semiconductor substrate, a bipolar junction transistor (BJT) disposed above the semiconductor substrate and comprising indium, and a HEMT disposed above the semiconductor substrate and comprising indium.