QUALCOMM Incorporated
GATE-ALL-AROUND (GAA) TRANSISTOR WITH INSULATOR ON SUBSTRATE AND METHODS OF FABRICATING

Abstract:

A gate-all-around (GAA) transistor has an insulator on a substrate. The GAA transistor also may have different crystalline structures for P-type work material and N-type work material. The GAA transistor includes one or more channels positioned between a source region and a drain region. The one or more channels, which may be nanowire, nanosheet, or nanoslab semiconductors, are surrounded along a longitudinal axis by gate material. At a first end of the channel is a source region and at an opposite end of the channel is a drain region. To reduce parasitic capacitance between a bottom gate section and a substrate, an insulator is added on the substrate. Further improvements are made in performance of a circuit having both P-type work material and N-type work material by providing different crystalline lattice structures for the work material.