QUALCOMM Incorporated
REPURPOSED SEED LAYER FOR HIGH FREQUENCY NOISE CONTROL AND ELECTROSTATIC DISCHARGE CONNECTION

Last updated:

Abstract:

An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.

Status:
Application
Type:

Utility

Filling date:

29 May 2020

Issue date:

2 Dec 2021