QUALCOMM Incorporated
One-time programmable (OTP) memory cell circuits employing a diode circuit for area reduction, and related OTP memory cell array circuits and methods

Abstract:

An OTP memory cell circuit includes a read access switch coupled to a fuse in a read current path to allow a read current to flow through the fuse during a read operation. The read access switch, which can be shut off in a write operation, is sized according to the read current to reduce leakage currents that can cause unreliable results. A diode circuit coupled to a node between the read access switch and the fuse provides a write current path through the fuse different from the read current path in the OTP memory cell circuit. The diode circuit is configured to drive, through the write current path including the fuse, a write current sufficient to blow the fuse in a write operation. The diode circuit occupies a smaller area than a write access transistor of comparable drive strength in the OTP memory cell circuit.