QUALCOMM Incorporated
CIRCUIT TECHNIQUES FOR ENHANCED ELECTROSTATIC DISCHARGE (ESD) ROBUSTNESS
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Abstract:
Exemplary electrostatic discharge (ESD) circuit schemes are provided according to various aspects of the present disclosure. In certain aspects, a current path is created during an ESD event that causes current to flow through a resistor coupled to a protected transistor (e.g., a driver transistor). The current through the resistor creates a voltage drop across the resistor, which reduces the voltage seen by the protected transistor. In certain aspects, the current path is provided by an ESD circuit coupled to a node between the resistor and the transistor. In certain aspects, the current path is created by turning on the transistor during the ESD event with a trigger device.
Status:
Application
Type:
Utility
Filling date:
22 Jun 2021
Issue date:
30 Dec 2021