QUALCOMM Incorporated
Wire bond inductor structures for flip chip dies

Last updated:

Abstract:

An integrated circuit (IC) package comprising a first die, including an active layer opposite a backside surface of the first die supporting a plurality of backside pads is provided. The IC package also incorporates a package substrate coupled to the active layer. The package pads on the package substrate correspond to the plurality of backside pads. A passive device comprising a plurality of wire bonds is coupled to the plurality of backside pads and the plurality of package pads. The passive device may also comprise a plurality of wire bonds coupled to the package pads by through silicon vias (TSVs). Multiple dies may be coupled with die-to-die wire bonds coupled to backside pads on each die.

Status:
Grant
Type:

Utility

Filling date:

8 Oct 2020

Issue date:

1 Feb 2022