QUALCOMM Incorporated
CELL ARCHITECTURE WITH AN ADDITIONAL OXIDE DIFFUSION REGION

Abstract:

A MOS device includes a set of pMOS transistors on a first side of an IC. The set of pMOS transistors is adjacent to each other in a second direction. The MOS device further includes a set of nMOS transistors on a second side of the IC. The set of nMOS transistors is adjacent to each other in the second direction. The second side is opposite the first side in a first direction orthogonal to the second direction. The MOS device further includes an OD region between the set of pMOS transistors and the set of nMOS transistors. A first set of gate interconnects may extend in the first direction over the OD region. A set of contacts may contact the OD region. The OD region, the first set of gate interconnects, and the set of contacts may form a set of transistors configured as dummy transistors or decoupling capacitors.