QUALCOMM Incorporated
Repurposed seed layer for high frequency noise control and electrostatic discharge connection
Last updated:
Abstract:
An integrated circuit (IC) package is described. The IC package includes a die, having a pad layer structure on back-end-of-line layers on a substrate. The die also includes a metallization routing layer on the pad layer structure, and a first under bump metallization layer on the metallization routing layer. The IC package also includes a patterned seed layer on a surface of the die to contact the first under bump metallization layer. The IC package further includes a first package bump on the first under bump metallization layer.
Status:
Grant
Type:
Utility
Filling date:
29 May 2020
Issue date:
5 Jul 2022