QUALCOMM Incorporated
Pseudo-triple-port SRAM

Last updated:

Abstract:

A pseudo-triple-port memory is provided that includes a plurality of pseudo-triple-port bitcells, each pseudo-triple-port first bitcell having a first read port including a first word line coupled to a first bit line through a first access transistor, a second read port including a second word line coupled to a second bit line through a second access transistor, and a write port including both the word lines, both the bit lines, and the pair of access transistors.

Status:
Grant
Type:

Utility

Filling date:

25 Aug 2020

Issue date:

26 Jul 2022