QUALCOMM Incorporated
Integrated device comprising transistor coupled to a dummy gate contact

Abstract:

An integrated device that includes a substrate, a first transistor located over the substrate, where the first transistor includes a gate. The integrated device includes a first gate contact coupled to the gate of the first transistor, where the first gate contact is configured to be electrically coupled to an interconnect of the integrated device. The integrated device includes a second gate contact coupled to the gate, where the second gate contact is directly electrically coupled to only the gate.