QUALCOMM Incorporated
Advanced integrated passive device (IPD) with thin-film heat spreader (TF-HS) layer for high power handling filters in transmit (TX) path

Abstract:

A semiconductor package is described. The semiconductor package includes a passive substrate and a first integrated passive device (IPD) in a first interlayer-dielectric (ILD) layer on the passive substrate. The semiconductor package also includes a second ILD layer on the first ILD layer. The semiconductor package further includes a second IPD in a third ILD layer on the second ILD layer. The semiconductor package also includes a thermal mitigation structure on inductive elements of the second IPD.