QUALCOMM Incorporated
Memory bank group interleaving

Abstract:

Memory utilization in an SDRAM system may be improved by increasing memory bank group and memory bank interleaving. Memory bank group interleaving and memory bank interleaving may be increased by a memory controller generating a physical memory address in which the bank group address bits are positioned nearer the LSB of the physical memory address than the MSB. Alternatively, or in addition to positioning the bank group address bits in such a manner, memory bank group interleaving and memory bank interleaving may be increased by hashing the bank group address bits and bank address bits of the physical memory address with row address bits of the initial physical memory address, A rank address bit may also be involved in the hashing.