QUALCOMM Incorporated
Heterogeneous integrated wideband high electron mobility transistor power amplifier with a single-crystal acoustic resonator/filter

Abstract:

A 3D integrated circuit (3D IC) chip is described. The 3D IC chip includes a die having a compound semiconductor high electron mobility transistor (HEMT) active device. The compound semiconductor HEMT active device is composed of compound semiconductor layers on a single crystal, compound semiconductor layer. The 3D IC chip also includes an acoustic device integrated in the single crystal, compound semiconductor layer. The 3D IC chip further includes a passive device integrated in back-end-of-line layers of the die on the single crystal, compound semiconductor layer.