QUALCOMM Incorporated
Distributed feedback (DFB) laser on silicon and integrated device comprising a DFB laser on silicon

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Abstract:

A distributed feedback (DFB) laser that includes a substrate comprising a first surface and a second surface, wherein the substrate comprises silicon; a plurality of shallow trench isolations (STIs) located over the second surface of the substrate; a grating region located over the plurality of STIs and the substrate, wherein the grating region comprises a III-V semiconductor material; a non-intentional doping (NID) region located over the grating region; and a contact region located over the NID region.

Status:
Grant
Type:

Utility

Filling date:

27 Feb 2020

Issue date:

6 Sep 2022