QUALCOMM Incorporated
Ultrasonic sensor system with higher-frequency and lower-frequency areas

Abstract:

An apparatus may include an ultrasonic sensor system having an ultrasonic transceiver layer, a thin-film transistor (TFT) layer and a frequency-differentiating layer. In some examples, the frequency-differentiating layer may include a first frequency-differentiating layer area corresponding to a lower-frequency area of the ultrasonic sensor system. The first frequency-differentiating layer area may include a first material having a first acoustic impedance. In some such examples, the frequency-differentiating layer may include a second frequency-differentiating layer area corresponding to a higher-frequency area of the ultrasonic sensor system. The second frequency-differentiating layer area may include a second material having a second acoustic impedance. The first acoustic impedance may, for example, be higher than the second acoustic impedance.