QUALCOMM Incorporated
Monolithic self-aligned heterojunction bipolar transistor (HBT) and complementary metal-oxide-semiconductor (CMOS)

Abstract:

Certain aspects of the present disclosure generally relate to an integrated circuit (IC) having a heterojunction bipolar transistor (HBT) device. The HBT device generally includes an emitter region and a collector region. The collector region may include a proton implant region having an edge aligned with an edge of the emitter region. In certain aspects, the HBT device also includes a base region disposed between the emitter region and the collector region.